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| HITFET(R) BTS 117 Smart Lowside Power Switch Features * Logic Level Input * Input Protection (ESD) * Thermal Shutdown * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Status feedback with external input resistor * Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 m 1000 mJ Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M Drain 2 dv/dt limitation Current lim itation Overvoltage protection 1 IN ESD Overload protection Overtemperature protection Short circuit Short circuit protection protection Source 3 HIT F ET (R) Semiconductor Group Page 1 13.07.1998 BTS 117 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V VIN 10V Symbol Value 60 32 mA no limit | IIN | 2 Unit V VDS VDS(SC) IIN VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS - 40 ... +150 - 55 ... +150 50 1000 3000 C W mJ V TC = 25 C Unclamped single pulse inductive energy ID(ISO) = 3.5 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD 75 70 E 40/150/56 V VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 , ID=0,5*3.5A td = 400 ms, RI = 2 , ID= 3.5A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) R thJC R thJA R thJA 2.5 75 45 K/W 1A sensor holding current of 500 A has to be guaranted in the case of thermal shutdown (see also page 3) 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for Drain connection. PCB is vertical 2 without blown air. Semiconductor Group Page 2 13.07.1998 BTS 117 Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 30 120 2200 max. 73 5 2.2 60 300 4000 V A V A Unit VDS(AZ) IDSS VIN(th) IIN(1) 60 1.3 800 Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 C, VIN = 0 V Input threshold voltage ID = 0.7 mA Input current - normal operation, ID Input current - current limitation mode, ID=ID(lim) : IIN(2) VIN = 10 V Input current - after thermal shutdown, ID =0 A: IIN(3) IIN(H) VIN = 10 V Input holding current after thermal shutdown Tj = 25 C Tj = 150 C On-state resistance 500 300 90 180 80 160 - m 120 240 m 100 200 A RDS(on) - ID = 3.5 A, VIN = 5 V, Tj = 25 C ID = 3.5 A, VIN = 5 V, Tj = 150 C On-state resistance RDS(on) 3.5 ID = 3.5 A, VIN = 10 V, Tj = 25 C ID = 3.5 A, VIN = 10 V, Tj = 150 C Nominal load current (ISO 10483) ID(ISO) VIN = 10 V, VDS = 0.5 V, TC = 85 C Semiconductor Group Page 3 13.07.1998 BTS 117 Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Initial peak short circuit current limit Symbol min. Values typ. max. Unit ID(SCp) ID(lim) 7 25 10 15 A VIN = 10 V, VDS = 12 V Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off VIN to 90% ID : VIN to 10% ID : 70 to 50% Vbb: 50 to 70% Vbb: ton toff -dVDS /dton dVDS/dtoff - 40 70 1 1 70 150 3 3 s RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V V/s RL = 4.7 , VIN = 0 to 10 V, Vbb = 12 V RL = 4.7 , VIN = 10 to 0 V, Vbb = 12 V Protection Functions Thermal overload trip temperature Unclamped single pulse inductive energy Tjt EAS 150 1000 225 165 --- --- C mJ ID = 3.5 A, Tj = 25 C, Vbb = 32 V ID = 3.5 A, Tj = 150 C, Vbb = 32 V Inverse Diode Inverse diode forward voltage VSD - 1 - V IF = 5*3.5A, tm = 300 s, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the application, these values might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition Semiconductor Group Page 4 13.07.1998 BTS 117 Block Diagramm Terms Inductive and overvoltage output clamp RL I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb V Z D S HITFET Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN I D(Lim) ESD-ZDI Source ID t0 tm t1 t2 ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V. t0 : tm : t1 : Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. t2 : Semiconductor Group Page 5 13.07.1998 BTS 117 Maximum allowable power dissipation Ptot = f(Tc ) BTS 117 On-state resistance RON = f(Tj); ID=3.5A; VIN =10V 50 W 200 150 RDS(on) 40 Ptot 35 30 25 20 15 max. 125 100 typ. 75 50 10 25 5 0 0 0 -50 -25 0 25 50 75 100 C 20 40 60 80 100 120 C 150 150 150 Tj On-state resistance RON = f(Tj); ID= 3.5A; VIN=5V 250 Typ. input threshold voltage VIN(th) = f(Tj ); ID =0.7A; VDS=12V 2.0 V 200 1.6 RDS(on) 175 150 max. VIN(th) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 125 100 75 50 25 0 -50 typ. -25 0 25 50 75 100 C 150 -25 0 25 50 75 100 C 150 Tj Tj Page 6 Semiconductor Group 13.07.1998 BTS 117 Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj=25C 10 Typ. output characteristic ID = f(VDS); Tj=25C Parameter: VIN 10 10V 6V 5V A A ID 6 ID 6 4V 4 4 Vin=3V 2 2 0 0 1 2 3 4 5 6 V 8 0 0 1 2 3 4 V 6 VIN VDS Transient thermal impedance Z thJC = f(tP) Parameter: D=tP/T 10 1 K/W RthJC 10 0 D=0.5 0.2 0.1 0.05 10 -1 0.02 0.01 0.005 0 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Semiconductor Group Page 7 13.07.1998 BTS 117 Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S V bb C V IN HITFET V V IN thermal shutdown V = RST *IIN(3) Semiconductor Group Page 8 13.07.1998 BTS 117 Package and ordering code all dimensions in mm Ordering code: Q67060-S6500-A3 Ordering Code: Q67060-S6500-A2 Semiconductor Group Page 9 13.07.1998 BTS 117 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 10 13.07.1998 |
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